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LC331632M-10 - 512K (32768 words X 16 bits) Pseudo-SRAM

LC331632M-10_229323.PDF Datasheet


 Full text search : 512K (32768 words X 16 bits) Pseudo-SRAM


 Related Part Number
PART Description Maker
LC36256AML-85 LC36256AML-12 LC36256AML-70 256K (32768 words x 8 bits ) SRAM
SANYO
EDS6416AHBH-75-E EDS6416CHBH-75-E 64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
Elpida Memory, Inc.
LC33832M LC33832ML-10 LC33832ML-70 LC33832ML-80 LC 256K (32768word x 8bit) Pseudo-SRAM
256 K (32768 words X 8 bits) Pseudo-SRAM 256度(32768字8位)伪SRAM
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution, Inc.
IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution, Inc
IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
IS42S16100A1-10T 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
Integrated Silicon Solution, Inc.
EDS2532AABJ-6B-E EDS2532AABJ-6BL-E 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位)
256M bits SDRAM (8M words ?32 bits)
Elpida Memory, Inc.
EDD2516AKTA-E 256M bits DDR SDRAM (16M words x16 bits DDR400)
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EDD1216AATA-5 EDD1216AATA-5B-E EDD1216AATA-5C-E 128M bits DDR SDRAM (8M words x 16 bits, DDR400)
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ELPIDA MEMORY INC
EDD2504AKTA-7B EDD2504AKTA-6B 256M bits DDR SDRAM (64M words x 4 bits)
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EDS1216AABH EDS1216CABH (EDS1216AABH / EDS1216CABH) 128M bits SDRAM (8M words x 16 bits)
Elpida Memory
 
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LC331632M-10 Ic-on-line LC331632M-10 Terminal LC331632M-10 filetype:pdf LC331632M-10 Rectifier LC331632M-10 описание
LC331632M-10 ic资料网 LC331632M-10 Regulator LC331632M-10 device LC331632M-10 international LC331632M-10 number
 

 

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